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Advance Product Information
October 20, 2004
6.5 Watt Ku Band Power Amplifier
Key Features
* * * * * * * *
TGA2514- EPU-FL
TGA2514-FL DATE CODE LOT CODE
Frequency Range: 13 - 16 GHz 38 dBm Nominal Psat 24 dB Nominal Gain 14 dB Nominal Return Loss 0.25-um pHEMT 3MI Technology 10 lead flange package Bias Conditions: 8 V @ 2.6 A Idq Package dimension: 0.45 x 0.68 x 0.12 in.
Primary Applications Product Description
The TGA2514-EPU-FL provides 24 dB of gain and 6.5W of output power across 13-16 GHz. The TGA2514-EPU-FL is designed using TriQuint's proven standard 0.25-m gate pHEMT production process. This device is ideally suited for VSAT Transmitter and Point to Point Radio applications. The flange lead package has a high thermal conductivity copper alloy base. Evaluation Boards are available.
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Ku band VSAT Transmitter Point to Point Radio Measured Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
40 39 38
Psat (dBm)
37 36 35 34 33 32 31 30 13 14 15 16 17 18 19 20
Frequency (GHz)
28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 9 11 13 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 19 21 23
Gain
Output
Input
15
17
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
Gain (dB)
Advance Product Information
TABLE I MAXIMUM RATINGS
Symbol V+ VI+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value 9V -5V TO -0.35V 4A 113 mA 30.3 dBm 20.8 W 150 0C 210 0C -65 to 150 0C 2/ 2/, 3/ 4/ 2/
October 20, 2004 TGA2514-EPU-FL
Notes 2/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this bias condition with a base plate temperature of 70 0C, the median life is 1E+6 hours. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 20, 2004 TGA2514-EPU-FL
TABLE II RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (Vd = 8V, Id = 2.6 A)
SYMBOL
PARAMETER
TEST CONDITION f = 13-16 GHz
TYPICAL
UNITS
Gain
Small Signal Gain
24
dB
IRL
Input Return Loss
f = 13-16 GHz
14
dB
ORL
Output Return Loss
f = 13-16 GHz
14
dB
Psat
Saturated Power
f = 13-16 GHz
38
dBm
TABLE III THERMAL INFORMATION Parameter RJC Thermal Resistance (channel to backside of package) Test Conditions Vd = 8 V ID = 2.6 A (Quiescent) Pdiss = 20.8 W TCH (oC) 150 RTJC (qC/W) 3.9 TM (HRS) 1 E+6
Note: Package backside SnPb soldered to carrier at 70C baseplate temperature. At saturated output power, the DC power consumption is 28.8 W with 6.5 W RF power delivered to the load. Power dissipated is 22.3 W and the temperature rise in the channel is 87 C. The baseplate temperature must be reduced to 63C to remain below the 150 C maximum channel temperature.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 20, 2004 TGA2514-EPU-FL
Measured Fixture Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 9 11 13
Gain
Output
Input
28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 19 21 23
15
17
Frequency (GHz)
40 39 38
Psat (dBm)
37 36 35 34 33 32 31 30 13 14 15 16 17 18 19 20
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
Gain (dB)
Advance Product Information
October 20, 2004 TGA2514-EPU-FL
Measured Fixture Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
4.5 4 3.5
Id (A)
3 2.5 2 1.5
13.5G H z 14G H z 14.5G H z 15G H z
9
10
11
12
13
14
15
16
17
18
19
20
21
22
P in (d B m )
40
38
Pout (dBm)
36
13.5GHz 14GHz 14.5GHz
34
32
15GHz
30 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Pin (dBm)
25
23
Power Gain (dB)
21
13.5GHz 14GHz 14.5GHz
19
17
15GHz
15 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Pin (dBm)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 20, 2004 TGA2514-EPU-FL
Evaluation Board Drawing
Notes: 1. Vd must remain below 9V to comply with maximum rating value. 2. The drain supply must be connected to both sides of the evaluation block. 3. The cooling fan must be powered at all times when the device is under bias. 4. Connect fan supply red/black to +12V. It requires ~100mA.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 20, 2004 TGA2514-EPU-FL
Assembly Diagram
Vd Vd 1 PF 0.01PF 6 RF In 3 10 8 RF Out 0.01 PF 1 PF
TGA2514-FL
Gnd 2,4,7 1 5
10 : Vg 1 PF 0.01 PF 10 : Vg 1 PF 0.01 PF
Note: Vg can be biased from either Pin 1 or Pin 5
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 20, 2004 TGA2514-EPU-FL
Mechanical Drawing TGA2514-EPU-FL
N/C
Note: All dimensions are in inches with 0.005 tolerance
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 20, 2004 TGA2514-EPU-FL
Assembly of a TGA2514-EPU-FL Surface Mount Package onto a Motherboard
1. Clean the motherboard or module with acetone. Rinse with alcohol and DI water. Allow the circuit to fully dry. 2. To improve the thermal and RF performance, we recommend a heat sink attached to the bottom of the package and apply SnPb or equivalent solder to the bottom of TGA2514. 3. Apply SnPb or equivalent solder to each pin of TGA2514 and to the backside of the package. 4 Clean the assembly with alcohol. .
Ordering Information
Part TGA2514-EPU-FL Package Style Flange (package bolted down)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

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